Lists of achievements in 2003

<Scientific Papers>
No. Title Journal Authors
1 RF-molecular beam epitaxy growth and properties of InN and related alloys Jpn. J. Appl. Phys., 1 42, 2549. (2003). Y.Nanishi, Y.Saito and T.Yamaguchi
2 Optical and magnetic properties of the DyN/GaN superlattice phys. stat. sol. (b) 240, 440. (2003). Y.K.Zhou, M.S.Kim, N.Teraguchi, A.Suzuki, Y.Nanishi and H. Asahi
3 MBE-growth, characterization and properties of InN and InGaN phys. stat. sol. (a) 200, 202. (2003). Y.Nanishi, Y.Saito, T.Yamaguchi, M.Hori, F.Matsuda, T.Araki, A.Suzuki and T.Miyajima
4 Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate phys. stat. sol. (b) 240, 429. (2003). T. Yamaguchi, Y.Saito, C.Morioka, K.Yorozu, T.Araki, A.Suzuki and Y.Nanishi
5 Phonons and free-carrier properties of binary, ternary and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry phys. stat. sol. (c) 0, 1750. (2003). A.Kasic, M.Schubert, J.Off, B.Kuhn, F.Scholz, S.Einfeldt, T.Bottcher, D.Hommel, D.J.As, U.Kohler, A.Dadgar, A.Krost,Y.Saito, Y.Nanishi, M.R.Correia, S.Pereira, V.Darakchieva, B.Monemar, H.Amano, I.Akasaki and G.Wagner
6 Surface treatment of GaN and InN using (NH4)2Sx phys. stat. sol. (c) 0, 2031. (2003). T.Maruyama, K.Yorozu, T.Noguchi, Y.Seki, Y.Saito, T.Araki and Y.Nanishi
7 Local structure of rare-earth-doped dulited magnetic semiconductor GaGdN phys. stat. sol. (c) 0, 2650. (2003). M.Hashimoto, S.Emura, R.Asano, H.Tanaka, N.Teraguchi, A.Suzuki, Y.Nanishi, T.Honma, N.Umesaki and H.Asahi
8 TEM characterization of InN films grown by RF-MBE phys. stat. sol. (c) 0, 2798. (2003). T.Araki, S.Ueno, K.Mizuo, T.Yamaguchi, Y.Saito and Y.Nanishi
9 Influence of substrate polarity on growth of InN films by RF-MBE phys. stat. sol. (c) 0, 2810. (2003). F.Matsuda, Y.Saito, T.Muramatsu, T.Yamaguchi, Y.Matsuo, A.Koukitu, T.Araki and Y.Nanishi
10 Spectroscopic observation of oxidation process in InN Appl. Phys. Lett. 84, 212 (2004). E.Kurimoto, M.Hangyo, H.Harima, M.Yoshimoto, T.Yamaguchi, T.Araki, Y.Nanishi and K.Kisoda
11 Recent development of InN RF-MBE growth and its structural and property characterization phys. stat. sol. (c) 1, 1487. (2004). Y.Nanishi, Y.Saitio, T. Yamaguchi, T.Araki, T.Miyajima and H.Naoi
12 Study on cubic GaN growth on (001) rutile TiO2 substrates by ECR Mat. Res. Soc. Symp. Proc. 743 169. (2003) T.Araki, H.Mamiya, K.Kitamura and Y.Nanishi
13 Single crystalline InN films grown on Si substrates by using a brief substrate nitridation process Mat. Res. Soc. Symp. Proc. 743 163. (2003) T.Yamaguchi, K.Mizuo, Y.Saito, T.Noguchi, T.Araki and Y.Nanishi
14 Electrical and optical properties of InN/Si heterostructure Mat. Res. Soc. Symp. Proc. 743 719. (2003) K.Mizuo, T.Yamaguchi, Y.Saito, T.Arakiand Y.Nanishi
15 Growth and properties of polyerystalline GaN on ZnO/Si substrates by ECR-MBE Inst. Phys. Conf. Ser. 174 13-16 (2003)
 K.Kitamura, H.Mamiya, T.Araki and Y.Nanishi
16 Single crystalline InN films grown on Si (111) substrates Inst. Phys. Conf. Ser. 174 17-20 (2003) T.Yamaguchi, K.Mizuo, Y.Saito, T.Araki, Y.Nanishi, T.Miyajima

<International Conferences>
No. Title Conference Authors
1 Potential and Issues of High-power,High-frequency AlGaN/GaN HFETs Yasushi Nanishi APWS-2003*1 （Invited Speaker)
AWAJI YUMEBUTAI International Conference Center,Hyogo,Japan
BP02 (2003)		 Yasushi Nanishi
2 Influence of substrate polarity on growth of InN films by RF-MBE ICNS-5*2
Nara-Ken New Public Hall, Nara, Japan
Tu-P2.099		 F.Matsuda, Y.Saito, T.Muramatsu, T.Yamaguchi,Y.Matsuo, A.Koukitu, T.Araki and Y.Nanishi
3 TEM characterization of InN films grown by rf-MBE ICNS-5*2
Nara-Ken New Public Hall, Nara, Japan
Tu-P2.102		 T.Araki, K.Mizuo, T.Yamaguchi, Y.Saito and Y.Nanishi
4 Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate ICNS-5*2
Nara-Ken New Public Hall, Nara, Japan
Tu-P2.112 		T.Yamaguchi, Y.Saito, C.Morioka, K.Yorozu, T.Araki, A.Suzuki and Y.Nanishi
5 Surface treatment of GaN and InN using (NH4)2Sx ICNS-5*2
Nara-Ken New Public Hall, Nara, Japan
Th-P3.024		 T.Maruyama, K.Yorozu, T.Noguchi, Y.Seki, Y.Saito, T.Araki and Y.Nanishi
6 The influence of composition and strain on phonon modes and band-to-band transitions in hyxagonal InGaN ICNS-5*2
Nara-Ken New Public Hall, Nara, Japan
Tu-P2.050
 A.Kasic, M.Schubert, Y.Saito, M.Kurouchi, Y.Nanishi, J.Off, F.Scholz, M.R.Correia, S.Pereira, B.Monemar
7 Structural and magnetic properties of rare-earth-doped diluted magnetic semiconductor GaGdN ICNS-5*2
Nara-Ken New Public Hall, Nara, Japan
Th-P3.034		 M.Hashimoto, S.Emura, R.Asano, H.Tanaka, Y.K. Zhou, N.Teraguchi, A.Suzuki, Y.Nanishi, T.Honma, N.Umesaki and H.Asahi
8 MBE-Growth, Characterization and Properties of InN and InGaN ICNS-5*2
Nara-Ken New Public Hall, Nara, Japan
We-A5.1		 Y.Nanishi, Y.Saito, T.Yamaguchi, M.Hori, F.Matsuda, T.Araki, A.Suzuki and T.Miyajima
9 Optical detection of major defects in InN ICNS-5*2
Nara-Ken New Public Hall, Nara, Japan
LN-P12		 E.Kurimoto, H.Harima, Y.Yamamoto, H.Wei, M.Yoshimoto, T.Yamaguchi, Y.Saito, and Y.Nanishi
10 Microstructure of polycrystalline GaN grown on silica glass by ECR-MBE ISCS-2003*3
San Diego, CA
MA2.2		 T.Araki, T.Ueno, S.Ueta and Y.Nanishi
11 Growth of InN and InGaN on Si substrate for solor cell applications ISCS-2003*3
San Diego, CA
MA1.4		 T.Yamaguchi, C.Morioka, K.Mizuno, M.Hori, T.Araki, A.Suzuki and Y.Nanishi
12 Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE 2003 MRS*4 Fall Meeting
Hyness Convention Center, Boston, USA
Y10.71		 C. Morioka, T. Yamaguchi, H. Naoi, T. Araki, A. Suzuki and Y. Nanishi
13 Structural Characterization of Low -Temperature InN Buffer Layer Grown by RF-MBE 2003 MRS*4 Fall Meeting
Hyness Convention Center, Boston, USA
Y10.68		 T.Araki, T.Yamaguchi, M.Kurouchi, C.Morioka Y.Nanishi and A.Suzuki
14 Band-Gap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy 2003 MRS*4 Fall Meeting
Hyness Convention Center, Boston, USA
Y12.1		 Y.Nanishi, Y.Saito, T.Yamaguchi, F.Matsuda, T.Araki A.Suzuki, H.Harima and T.Miyajima
15 Recent Development of InN RF-MBE Growth and its Structural and Property Characterization PLMCN3*5
Acireale, Sicily, ITALY.
#########		 Y.Nanishi, Y.Saito, T.Yamaguchi, T.Araki and T.Miyajima
16 RF-MBE Growth of High Quality InN and its Band Gap Energy The 4th Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments
Yangyang , KOREA		 Y.Nanishi, Y.Saito, T.Yamaguchi and T.Araki
17 Effect of substrate polarity on the growth of InN by RF-MBE ONR InN Workshop Y.Nanishi, F.Matsuda, T.Araki, A.Suzuki and H.Naoi
18 Growth of high quality InN epitaxial films and their properties PCSI-31*6
Kailua-Kona, Hawaii, USA
########		 Y.Nanishi, Y.Saito, T.Yamaguchi, M.Kurouchi, T.Araki and H.Naoi
19 Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE ISBLLED-2004*7
Gyeongju, Korea
B8-5 #1175 		M.Kurouchi, T.Araki, H.Naoi, T.Yamaguchi, A.Suzuki and Y.Nanishi
20 Recent Development of Nitride Semiconductor Electronic Devices for Next Generation Wireless Communications IWJT-2004*8
Shanghai, Chaina
Th-P3.024		 Y.Nanishi

<Domestic Conferences>
No. Title Conference Authors
1 窒化物半導体の新しい可能性 - InN系半導体の結晶成長とバンドギャップエネルギー 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 27p-T-1		 名西やすし
2 RF-MBE法を用いたInN膜の成長とその特性評価 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 27p-T-6		 齋藤義樹、山口智広、堀正輝、荒木努、名西やすし
3 EXAFS及びXRD法を用いたInN薄膜の構造評価 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 27p-T-7		 宮島孝夫、工藤喜弘、村上洋介、劉光佑、堀正輝、名西やすし
4 RF-MBE法によるSi(111)および(100)基板上InN結晶成長 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 28p-T-5		 水尾和洋、森岡千晴、山口智広、齋藤義樹、荒木努、鈴木彰、名西やすし
5 石英ガラス基板上GaN、InN RF-MBE成長における基板窒化の効果 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 28p-T-6		 山口智広、齋藤義樹、水尾和洋、上野朝隆、荒木努、鈴木彰、名西やすし
6 Sapphire基板上RF-MBE成長InNのエッチングによる極性評価 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 28p-T-9		 村松智、齋藤義樹、山口智広、荒木努、鈴木彰、名西やすし
7 GaN 基板上InN成長条件の基板極性依存性 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 28p-T-10		 松田文絵、齋藤義樹、村松智、山口智広、松尾有里子、纐纈明伯、荒木　努、名西やすし
8 RF-MBE成長InNのTEMによる評価 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 28p-T-12		 荒木努、水尾和洋、山口智広、齋藤義樹、名西やすし
9 InN Narrow Bandgapにおける電気的特性のシミュレーション 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 28p-T-18		 中里昌人、荒木努、中山弘、E.Kulatov、名西やすし
10 DyN/GaN超格子の磁気、光学特性 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 29p-ZH-11		 周逸凱、寺口信明、橋本政彦、田中浩之、鈴木彰、名西やすし、朝日一
11 希土類ドープ希薄磁性半導体GaGdNの局所構造 春季第50回応用物理学関係連合講演会
神奈川大学、３月(2003) 29p-ZH-22		 橋本政彦、江村修一、浅間陵、田中浩之、周逸凱、寺口信明、鈴木彰、名西やすし、本間徹生、梅咲則正、朝日一
12 Effects of initial growth processes for the growth of InN on sapphire substrate by RF-MBE EMS-22*9
Extended Abstracts of the 22nd Electronic Materials Symposium, E2, Laforet Biwako,
July 2-4, 2003		 T. Yamaguchi, Y. Saito, M. Kurouchi, F. Matsuda, T. Araki, A. Suzuki and Y. Nanishi
13 Observation of excited indium emission by optical emission spectroscopy during InN growth EMS-22*9
Extended Abstracts of the 22nd Electronic Materials Symposium, E1, Laforet Biwako,
July 2-4, 2003		 T. Koizumi, J. Wada, H. Mamiya, K. Kitamura, T. Ueno, N. Yamashita, T. Araki and Y. Nanishi
14 High In-composition InGaN growth by using MEE-InN buffer layer EMS-22*9
Extended Abstracts of the 22nd Electronic Materials Symposium, E3, Laforet Biwako,
July 2-4, 2003		 M. Kurouchi, F. Matsuda, M. Hori, T. Yamaguchi, Y. Saito, A. Suzuki, T. Araki and Y. Nanishi
15 Influences of substrate polarity on the growth of InN by RF-MBE EMS-22*9
Extended Abstracts of the 22nd Electronic Materials Symposium, J7, Laforet Biwako,
July 2-4, 2003		 F. Matsuda, Y. Saito, T. Muramatsu, T. Yamaguchi, Y. Matsuo, A. Koukitu, A. Suzuki, T. Araki and Y. Nanishi
16 Crystal growth of InN on Si(100) substrates by RF-MBE EMS-22*9
Extended Abstracts of the 22nd Electronic Materials Symposium, F17, Laforet Biwako,
July 2-4, 2003		 C. Morioka, K. Mizuo, T. Yamaguchi, Y. Saito, T. Araki, A. Suzuki and Y. Nanishi
17 Band offset of InN/Si hetero-junctions grown by RF-MBE EMS-22*9
Extended Abstracts of the 22nd Electronic Materials Symposium, F18, Laforet Biwako,
July 2-4, 2003		 A. Hinoki, T. Noguchi, K. Yorozu, T. Yamaguchi, C. Morioka, T. Araki and Y. Nanishi
18 Structural characterization of InN films grown by RF-MBE EMS-22*9
Extended Abstracts of the 22nd Electronic Materials Symposium, J16, Laforet Biwako,
July 2-4, 2003		 T. Araki, S. Ueta, C. Morioka, T. Yamaguchi, Y. Saito and Y. Nanishi
19 MBE成長InN薄膜の透過電子顕微鏡観察 第33回結晶成長国内会議（NCCG-33）
大阪大学コンベンションセンター（吹田市）
7月 (2003) 801aA3
 荒木努、植田紗依子、山口智広、松田文絵、森岡千晴、名西やすし
20 RF-MBE法を用いたSi(100)基板上におけるInNの結晶成長 第33回結晶成長国内会議（NCCG-33）
大阪大学コンベンションセンター（吹田市）
7月 (2003) 801aA1
 森岡千晴、山口智広、水尾和洋、荒木努、鈴木彰、名西やすし
21 高温InNバッファ層導入による高品質InN膜の実現 第33回結晶成長国内会議（NCCG-33）
大阪大学コンベンションセンター（吹田市）
7月 (2003) 801aA3
 山口智広、齋藤義樹、黒内正仁、森岡千晴、荒木努、鈴木彰、名西やすし
22 RF-MBE法を用いて作製したInN/Siによるpn接合の光起電力特性 第64回応用物理学会学術講演会
福岡大学(七隈)、8月(2003) 31p-G-17		 森岡千晴、山口智広、荒木努、鈴木彰、名西やすし
23 RF-MBE成長した高In組成InGaNの逆格子マッピングによる評価 第64回応用物理学会学術講演会
福岡大学(七隈)、8月(2003) 31p-G-14		 黒内正仁、堀正輝、山口智広、鈴木彰、荒木努、名西やすし
24 InN成長中のプラズマ発光分光分析による励起Inスペクトルの観察 第64回応用物理学会学術講演会
福岡大学(七隈)、8月(2003) 31p-G-4		 小泉豪、和田純一、上野朝隆、山下直樹、荒木努、名西やすし
25 RF-MBE成長低温InNバッファ層の極微構造評価 第64回応用物理学会学術講演会
福岡大学(七隈)、8月(2003) 31p-G-16		 荒木努、山口智広、黒内正仁、森岡千晴、鈴木彰、名西やすし
26 分光学的手法によるInN結晶中の欠陥研究 第64回応用物理学会学術講演会
福岡大学(七隈)、8月(2003) 31p-G-15		 栗本英治、山口智広、播磨弘、吉本昌弘、荒木努、名西やすし
27 AINバッファ層導入によるSi(111)基板上高品質InN結晶成長 第64回応用物理学会学術講演会
福岡大学(七隈)、8月(2003) 31a-G-8		 山口智広、栗本英治、播磨弘、萬謙太郎、森岡千晴、荒木努、鈴木彰、名西やすし
28 次世代情報通信用窒化物化合物半導体デバイス開発における材料学的課題 北海道大学（札幌市） 名西やすし

<Articles>
No. Title Article Authors
1 Microstructure of InN films grown by RF-MBE 立命館大学理工学研究所紀要　第62号 T. Araki and Y. Nanishi
2 RF-MBEによる高InN組成InGaNの結晶成長とその評価 立命館大学理工学研究所紀要　第62号 黒内正仁、堀正輝、山口智広、直井弘之、鈴木彰、荒木努、名西やすし
*1 APWS-2003 (First Asia-Pacific Workshop ON Widegap Semiconducors)
*2 ICNS-5 (5th International Conference on Nitride Semiconductors)
*3 ISCS2003 (30th International Symposium on Compound Semiconductors)
*4 2003 MRS Fall Meeting (2003 Materials Research Society Fall Meeting)
*5 3rd conference on Physics of Light-Matter Coupling in Nanostructures
*6 PLMCN3 (3rd conference on Physics of Light-Matter Coupling in Nanostructures)
*7 ISBLLED (The 5th International Symposium on Blue Laser and Light Emitting Diodes)
*8 IWJT-2004 (The International Workshop on Junction Technology)
*9 EMS-22 (22nd Electronic Materials Symposium)