A list of achievements in 2010

<Scientific Papers>
No. Title Journal Authors
1 Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure Appl. Phys. Lett., 96, 201903/1-3 J. Ibáñez, A. Segura, F. J. Manjón, L. Artús, T. Yamaguchi and Y. Nanishi
2 Meissner Effect of Superconducting InN phys. stat. sol. (c), 7, 1287-1292 T. Inushima, D. K. Maude, D. Muto and Y. Nanishi
3 Optical Polarization Anisotropy of Nonpolar InN Epilayers phys. stat. sol. (a), 207, 1356-1360 K. Wang, T.Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Araki and Y. Nanishi
4 RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization Proceedings of 22nd International Conference on Indium Phosphide and Related Materials（IPRM2010), 92-95 T. Araki, H. Umeda, T. Yamaguchi, T. Sakamoto, E. Yoon and Y. Nanishi
5 Study of the Flat Band Voltage Shift of Metal/Insulator/n-GaN Capacitors by Annealing phys. stat. sol. (b), 247, 1649-1652 J. Kikawa, M. Kaneko, H. Otake, T. Fujishima, K. Chikamatsu, A. Yamaguchi, Y. Nanishi
6 Plasmon-Induced Purcell Effect in InN/In Metal-Semiconductor Nanocomposites Phys. Rev. B., 82, 073304/1-4 T. V. Shubina, A. A. Toropov, V. N. Jmerik, D.I. Kuritsyn, L. V. Gavrilenko, Z. F. Krasil'nik, T. Araki, Y. Nanishi, B. Gil, A. O. Govorov, and S. V. Ivanov
7 Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers J. Appl. Phys., 108, 073529/1-10 V. Darakchieva, M.-Y. Xie, N. Franco, F. Giuliani, B. Nunes, E. Alves, C. L. Hsiao, L. C. Chen, T. Yamaguchi, Y. Takagi, K. Kawashima, and Y. Nanishi
8 The Low Leakage Current in Floating Body GaN Metal Oxide Semiconductor Field Effect Transistorsy Solid State Electronics, 54, 1561-1565 T. Fujishima, H. Otake, Y. Nanishi, and H. Ohta
9 In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN Jpn. J. Appl. Phys., 50, 01AE02 K. Wang, T.Yamaguchi, T. Araki, E.. Yoon, Y. Nanishi
10 Mg Doped InN and Confirmation of Free Holes in InN Appl. Phys. Lett., 98, 042104-1 K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III

<International Conferences>
No. 題 目 Conference Authors
1 Optical Hall Effect in InN: Bulk Doping Mechanism and Surface Electron Accumulation Properties PLCN10
 V. Darakchieva, M. Schubert, T. Hofmann, Monemar, W.J. Schaff, C.L. Hsiao, L.C. Chen, L.W Tu, T. Yamaguchi and Y. Nanishi
2 Present Status of Frontier Research on Nitride Semiconductor Optoelectronic Devices
 Japan-Korea Joint Symposium　 Y. Nanishi
3 Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method
 The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
 T. Yamaguchi, K. Wang, R. Iwamoto, N. Miller, M. Mayer, J. W. Ager III, K. M. Yu, W. Walukiewicz, T. Araki and Y. Nanishi
4 The Study of InAs/InGaAs Dot-in-a-Well Structures for Quantum Dot Infrared Photodectectors
 15th International Conference on Metal Organic Vapor Phase Epitaxy
 J. Kim, C. Yang, J. Lee, S. Ha, W. Choi, Y. Nanishi and E. Yoon
5 Growth and Characterization of GaN Layer Using InN Interlayer and Sapphire Substrate
 15th International Conference on Metal Organic Vapor Phase Epitaxy
K. Lee, S. Park, J. Kim, N. Kim, M. Kim, H. Na, Y. Nanishi, and E. Yoon
6 Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method
 IX International Conference of Polish Society for Crystal Growth
Y. Nanishi and T. Yamaguchi
7 RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization 22nd International Conference on Indium Phosphide and Related Materials（IPRM2010）
 T. Araki, H. Umeda, T. Yamaguchi, T. Sakamoto, E. Yoon and Y. Nanishi
8 High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy
 2010 E‐MRS Spring Meeting
 J. Ibáñez, A. Segura, F. J. Manjón, R. Cusco, L. Artús, T. Yamaguchi, and Y. Nanishi
9 Hydrogen in InN: Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material
 CIMTEC2010 (5th Forum on New Materials)
 V. Darakchieva, K. Lorenz, N. P. Barradas, E. Alves, M.-Y. Xie, B. Monemar, M. Schubert, W.J. Schaff, C.L. Hsiao, L.C. Chen, L.W. Tu, T. Yamaguchi, Y. Nanishi
10 Mg Doped InN and Search for P-type InN
 Electronic Materials Conference 2010(EMC2010)
 K. Wang, R. Iwamoto, T.Yamaguchi, K. Kagawa, T. Araki, Y. Nanishi, N. Miller, M. Mayer, W. Walukiewicz
11 Evidence of Free Holes in Mg Doped InN
 International Symposium on Growth of III-Nitrides 2010
 K. Wang, R. Iwamoto, T.Yamaguchi, K. Kagawa, T. Araki, Y. Nanishi, N. Miller, M. Mayer, J. W. Ager, K. M. Yu, W. Walukiewicz
12 Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE
 International Symposium on Growth of III-Nitrides 2010
 T. Kimura, E. Fukumoto, T. Yamaguchi, K. Wang, M. Kaneko, T. Araki, E. Yoon and Y. Nanishi
13 Growth, Monitoring, P-type doping and MQW Structure Fabrication by DERI Method
 The international worskshop on modern and advanced phenomena in wurtzite semiconductors
 Y. Nanishi
14 High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy
 48th European High Pressure Research Group Conference (EHPRG) F. J. Manjón, J. Ibáñez, A. Segura, R. Cuscó, L. Artús, T. Yamaguchi and Y. Nanishi
15 Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE
 The 16th International Conference on Crystal Growth (ICCG16)
 T. Araki, K. Kawashima, T. Yamaguchi, and Y. Nanishi
16 InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method 

T. Yamaguchi, K. Wang, T. Araki, E. Yoon, Y. Nanishi 
17 Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications
 The second LED domestic conference
 Y. Nanishi, T. Yamaguchi and E. Yoon
18 Growth and Characterization of InN-Related Materials
 Rainbow Second Training Workshop
 Y. Nanishi
19 Raman scattering study of the temperature dependence of phonons in InN
 The International Workshop on Nitride semiconductors (IWN2010)
 N. Domenech-Amador, L. Artús, R. Cuscó , J. Ibáñez, T. Yamaguchi and Y. Nanishi
20 Evidence of Rectification in InN pn Junctions
 The International Workshop on Nitride semiconductors (IWN2010)
 N. Miller, J. W. Ager III, E. E. Haller, W. Walukiewicz, Ke Wang, R. Iwamoto, T. Yamaguchi, K. Kagawa, T. Araki, Y. Nanishi
21 Free Hole Concentration and Mobility in InN: Mg
 The International Workshop on Nitride semiconductors (IWN2010)
 N. Miller, J. W. Ager III, E. E. Haller, W. Walukiewicz, Ke Wang, R. Iwamoto, T. Yamaguchi, K. Kagawa, T. Araki, Y. Nanishi
22 Unintentional incorporation of hydrogen in InN: diffusion kinetics and effect of surface orientation
 The International Workshop on Nitride semiconductors (IWN2010)
 V. Darakchieva, K. Lorenz, N. P. Barradas, E. Alves, L. Artus, D. Rogala, H.-W. Becker, C. L. Hsiao, L. C. Chen, L. W. Tu, T. Yamaguchi, Y. Nanishi
23 Potential of Nitride photocatalyst for water splitting The International Workshop on Nitride semiconductors (IWN2010)
 K. Ohkawa, T. Koyama, F. Sano, A. Hirako, T. Yamaguchi, Y. Nanishi
24 Wet Etching Process for InN Device Fabrication
 The International Workshop on Nitride semiconductors (IWN2010)
 A. Miki, K. Morimoto, N. Maeda, T. Yamaguchi, T. Araki, and Y. Nanishi 
25 Theoretical Calculation of DC Characteristics in Vertical Trench-Gate GaN Metal-Oxide-Semiconductors
 The International Workshop on Nitride semiconductors (IWN2010)
 T. Fujishima, K. Chikamatsu, H. Otake, H. Ohta, and Y. Nanishi
26 Dry etching of In-and N-polar InN using inductively-coupled plasma
The International Workshop on Nitride semiconductors (IWN2010)
 T. Fujishima, S. Takahashi, K. Morimoto, R. Iwamoto, N. Uematsu, M. Yutani, T. Yamaguchi, T. Araki, and Y. Nanishi
27 Mg doped InN and search for holes
 The International Workshop on Nitride semiconductors (IWN2010)
 K. Wang, R. Iwamoto, T. Yamaguchi, K. Kagawa, T. Araki, Y. Nanishi, N. Miller, M.Mayer, J W Ager, K. M. Yu, W. Walukiewicz
28 Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy
 The International Workshop on Nitride semiconductors (IWN2010)
 K. Wang, T. Yamaguchi, T. Araki, and Y. Nanishi
29 Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications
The International Workshop on Nitride semiconductors (IWN2010)
 Y. Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerⅢ, K.M.Yu, W.Walukiewicz
30 Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure
2010 International Coference on Solid State Devices and Materials
 T. Yamaguchi, Y. Nanishi
31 Recent Research Activities in Japan toward Nitride Semiconductor Opto-electronics Frontier
Korea Optoelectronic Engineering Society
 Y. Nanishi
32 Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Nano-Photonics
3rd GIST Information and Mechatronics Week 2010
 Y. Nanishi
33 Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation
SPIE Photonic West 2011
 T. Yamaguchi, Y. Nanishi
34 TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method
3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials　（ISPlasma2011）
T.Araki, T. Sakamoto, R. Iwamoto, T. Yamaguchi, E. Yoon, Y. Nanishi
35 Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN
3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials　（ISPlasma2011）
T. Yamaguchi, T. Fujishima, T. Araki, E. Yoon, Y. Nanishi
36 Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures
Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
Y. Nanishi, T.Yamaguchi ,K. Wang and T.Araki

<Domestic Conferences>
No. Title Conference Authors
1 窒化 物光半導体フロンティア領域開拓の現状 LED 総合フォーラム(Post-ISGN2) 名西憓之
2 DERI 法のRHEED強度その場観察手法を用いたラジカルセル診断 第２ 回窒化物半導体結晶成長講演会(Post-ISGN2) 勝木拓 郎、福本英太、山口智広、荒木努、名西憓之
3 DERI 法を用いたＩｎ系窒化物半導体の結晶成長とデバイス構造作製への応用 第２ 回窒化物半導体結晶成長講演会　プレISGN-3 山口智 広、荒木努、名西憓之
4 Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films grown by RF-MBE 29th 　Electronic Materials Symposium (EMS29) K. Morimoto, S. Kikuchi, N. Maeda, T. Yamaguchi, Y. Nanishi
5 Wet Etching by KOH for InN Device Fabrication 29th 　Electronic Materials Symposium (EMS29) A. Miki, K. Morimoto, N. Maeda, T. Yamaguchi, T. Araki, and Y. Nanishi
6 Water sterilization by AlGaN-based deep UV LEDs 29th 　Electronic Materials Symposium (EMS29) K. Yoshida, M. Kurouchi, M. Takeuchi, N. Yasui, T. Araki, N. Kamiko, Y. Nanishi, Y. Aoyagi
7 Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE  29th 　Electronic Materials Symposium (EMS29) T. Yamaguchi, H. Umeda, T. Sakamoto, T. Araki, E. Yoon and Y. Nanishi 
8 Forty years research toward compound semiconductor frontiers -Tributary road from GaAs to InN through GaN - 29th 　Electronic Materials Symposium (EMS29) Y. Nanishi
9 TEM を用いたDERI法ドープInNの極微構造評価 2010 年（平成22年） 秋季 第71回応用物理学会学術講演会 坂本努、 山口智広、岩本亮輔、荒木努、名西憓之
10 DERI 法を用いたInGaN成長と組成制御への試み 2010 年（平成22年） 秋季 第72回応用物理学会学術講演会 岩本亮 輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西憓之
11 InN デバイス作製プロセスへのウエットエッチングの適用 2010 年（平成22年） 秋季 第72回応用物理学会学術講演会 三木彰、 森本健太、前田就彦、山口智広、荒木努、名西憓之
12 DERI 法InGaN成長を用いた厚膜化への試み 2010 年（平成22年） 秋季 第72回応用物理学会学術講演会 上松尚、 山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西憓之
13 深紫 外線LEDを用いたオゾン濃度測定 Measurement of Ozone Concentration Using DUV-LEDs 2010 年（平成22年） 秋季 第72回応用物理学会学術講演会 吉田 薫，黒内 正仁, 武内 道一，荒木 努，名西 やすし， 菅野 裕靖, 阿彦 由美, 中村 広隆, 青柳 克信
14 MBE 法を用いたA面GaNテンプレート上Ａ面InN選択成長 平成 22年　電気関係学会関西連合大会 山下修 平、　山口智広、　荒木努、　名西憓之
15 窒化物 光半導体未踏領域への挑戦 -InNと関連混晶の新しい成長技術と評価  応用物 理学会九州支部学術講演会 名西憓之、山口智広 、王科 , 荒木努、Euijoon Yoon
16 RF-MBE 法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討  2010 年度 電子情報通信学会 レーザ・量子エレクトロニクス研究会 荒木　 努、川島　圭介、山口　智広、名西　憓之
17 N極性 及びIn極性のInN-MIS構造の作製と評価 2011 年春季 第58回 応用物理学関係連合講演会 森本健 太、三木彰、山口智弘、前田就彦、荒木努、名西憓之
18 電流- 電圧特性の温度依存性評価によるｐ型InNの検証 2011 年春季 第58回 応用物理学関係連合講演会 櫻井秀 昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西憓之
19 化合物 半導体フロンティアへの挑戦　- 鍵を握る結晶成長技術- 赤崎賞 受賞記念講演会（2011年春季 第58回 応用物理学関係連合講演会） 名西憓 之