Professor, Yasushi Nanishi



Professor

Department of Photonics

School of Science and Engineering

Ritsumeikan University

1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.

E-mail address: nanishise.ritsumei.ac.jp


Education


B. S, Nagoya Institute of Technology, Japan (1969)

M. E., Nagoya University, Japan (1971)

Ph. D., Naogya Univeristy, Japan (1986)

Carrier


1971 ~ 1994 Member of a research staff

NTT LSI and Opto-electronics Laboratories, Japan

1978 ~ 1980 Visiting scientist

Massachusetts Institute of Technology, USA

1994 ~ present Professor

Department of Photonics at Ritsumeikan University, Japan

Research Interest


He has been engaged in the research fields concerning GaAs MES FETs, Liquid Phase Epitaxy of GaAs, growth and characterization of bulk GaAs, correlation between GaAs crystal defects, and FET performances and Plasma Excited Molecular Beam Epitaxy. And he is now greatly interested in MBE growth of Nitride Semiconductors including InN, In-rich InGaN, and AlGaN, targeting their applications to electronic and optoelectronic devices. He has been a leader of two big projects, regional consortium project, NEDO, and national project on high-power, high-frequency GaN electronic devices, METI. And He is taking part in many research organizations, such as The Japan Society of Applied Physics, The Institute of Electrical Engineers of Japan, The Institute of Electronics, Information and Communication Engineers, The Japanese Association for Crystal Growth and American Material Research Society.





Associate Professor, Tsutomu Araki



Associate Professor

Department of Photonics

School of Science and Engineering

Ritsumeikan University

1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.

E-mail address: tarase.ritsumei.ac.jp

Education


M. E., Osaka Prefecture University, Japan (1994)

Ph. D., Osaka Prefecture University, Japan (1997)

Carrier


1997 ~ 1998 Postdoctoral fellow

Arizona State University and Purdue University, USA

1998 ~ 2001 Postdoctoral fellow

Department of Photonics at Ritsumeikan University, Japan

2002 ~ present F ixed-term associate professor

Department of Photonics at Ritsumeikan University, Japan

Research Interest


He has been engaged in the research fields concerning nitride semiconductors, and he has much experience in structural analysis of nitride semiconductors by transmission electron microscopy (TEM) and X-ray diffraction (XRD). He is a member of The Japan Society of Applied Physics, The Japanese Association for Crystal Growth and American Material Research Society.





Postdoctoral Fellow

Dr. Wang Ke
E-mail address: kewangfc.ritsumei.ac.jp

B.S. Nanjing University, China (2000)

M. S. University of Hong Kong, China (2003)

Ph. D. University of Strathclyde, UK (2007)

2008 ~ present@Postdoctoral fellow

Research Organization of Science and Engineering