発表論文を紹介します。
2008

(1) 道関隆国、 “バッテリレスシステムのセンサネットワークへの応用”、独立行政法人科学技術振興機構『希薄分散エネルギー活用技術』に関する科学技術未来戦略ワークショップ報告書pp. 50-55, March 2008.

(2) S. Sasaki, T.Douseki, Y. Matsuya, “Batteryless Optical Wireless Audio Receiver Uses 1-Bit ΣΔ-Modulated Visible Light and Spherical Si Solar Cells,” SICE Annual Conference 2008, pp. 1264-1268, Aug. 2008.

(3) Yoshifumi Yoshida, Fumiyasu Utsunomiya, Takauni Douseki, “Ultralow-voltage, Smart DC-DC Converter for Thermoelectrically Powered Wristwatch, ” ECS, PRiME2008、Oct. 2008.

(4) T. Douseki, S. Sasaki, Y. Matsuya, “Optical-wireless Digital-sound Transmission System With Spherical Solar Cells”, IEEE SENSORS 2008, pp. 608-611, Oct. 2008.


2006-2007

(1) N. Shibata, H. Kiya, S. Kurita, H. Okamoto, M. Tan’no, and T. Douseki, “A 0.5-V 25-MHz 1-mW 256-Kb MTCMOS/SOI SRAM for Solar-Power-Operated Portable Personal Digital Equipment- Sure Write Operation by Using Step-Down Negatively Overdriven Bitline Scheme,” IEEE J. Solid-state Circuits, Vol. 41, No. 3, pp. 728-742, March 2006.

(2) T. Sakurai, A. Matsuzawa, and T. Douseki, “Fully-Depleted SOI CMOS Circuits and Technology for Ultra-Low-Power Applications,” ISBN-10 0-387-29217-9, Springer, Apr. 2006.

(3) 門勇一、道関隆国、松谷康之、束原恒夫、“極低電力CMOS/SOI回路技術”、電気 学会論文誌C、IEEJ Trans. EIS, Vol. 126, No.6, pp.725-729, June 2006.

(4) Y. Yoshida, F. Utsunomiya, and T. Douseki, “Adaptive-Vth CMOS/SOI DC-DC Converter Scheme,” 2006 IEEE International SOI Conference, pp. 119-120, Oct. 2006.

(5) 道関隆国、 “バッテリレスシステムに向けた極低電力LSI 技術”、SEAJ/SEMI Industry Strategy and Technology Forum 2006, Oct. 2006.

(6) 道関隆国、 “ユビキタスエネルギー源”、日本学術振興会『ワイヤレス・センサーネ ットワーク社会に向けたナノメートルCMOSシステムとその要素技術の研究』に関す る先導的研究開発委員会報告書pp. 44-47, pp.105-106, March 2007.


1987-2005

[1]学術論文

(1) 道関隆国、大森康生、“BiCMOS技術による大容量・高速SRAMの構成法” 電子情報通信学会論文誌、C、Vol. J70-C, No.6, pp.783-790, June 1987.

(2) T. Douseki and Y. Ohmori, “BiCMOS Circuit Technology for a High-Speed SRAM,” IEEE J. solid-state Circuits, Vol. 23, No. 1, pp. 68-73, Feb. 1988.

(3) T. Douseki, Y. Ohmori, H. Yoshino, and J. Yamada, “Fast-Access BiCMOS SRAM with a VSS Generator,” IEEE J. Solid-State Circuits, Vol. 24, No. 4, pp. 513-517, Apr. 1991.

(4) 道関隆国、大森康生, “パイポーラ論理回路を用いた高速・大容量BiCMOS SRAM の構成法” 電子情報通信学会論文誌、C-II、Vol. J74-C-II, No.9, pp. 690-699, Sep. 1991.

(5) M. Tanimoto, T. Douseki, and T. Takigami, “An Analysis of p+-n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy.” Japanese Journal of Applied Physics, Vol. 30, No. 12B, pp. 3638-3641, Dec. 1991.

(6) 道関隆国、武藤伸一郎、”微細CMOSメモリセルのスタティックノイズマージン解析”、 電子情報通信学会論文誌、C-II、Vol. J75-C-II, No.7, pp. 350-361, July 1992.

(7) T. Douseki, T. Nagayama, and Y. Ohmori, “A Bipolar Divided Word-Line Scheme for a High-Speed and Large-Capacity BiCMOS SRAM.” Trans. IEICE, Vol. E75-C, No. 11, pp. 1364-1368, Nov. 1992.

(8) T. Douseki and S. Mutoh, “A High-Speed Feed-Forward BiNMOS Driver for Low Voltage LSIs.” Trans. IEICE, Vol. E76-C, No. 5, pp. 687-694, May 1993.

(9) T. Douseki, K. Aoyama, and Y. Omura, “Dependence of CMOS/SIMOX Inverter Delay Time on Gate Overlap Capacitance,” Trans. IEICE, Vol. E76-C, No. 8, pp. 1325-1332, Aug. 1993.

(10) S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, S. Shigematsu, and J. Yamada, “1-V Power Supply High-Speed Digital Circuit Technology with Multithreshold-Voltage CMOS,” IEEE J. Solid-State Circuits, Vol. 30, No. 8, pp. 847-854, Aug. 1995.

(11) T. Douseki, S. Mutoh, T. Ueki, and J. Yamada, “Evaluation of Soft-Error Immunity for 1-V CMOS Memory Cells with MTCMOS Technology.” Trans. IEICE, Vol. E79-C, No. 2, pp. 179-184, Feb. 1996.

(12) T. Douseki and S. Mutoh, “A 1-V MTCMOS Circuit Hardened to Temperature- Dependent Delay-Time Variation,” Trans. IEICE, Vol. E79-C, No. 8, pp. 1131-11136, Aug. 1996.

(13) T. Douseki, M. Harada, and T. Tsuchiya, “Ultra-Low-Voltage MTCMOS/SIMOX Technology Hardened to Temperature Variation,” Solid-State Electronics, Vol. 41, No. 4, pp. 519-525, Feb. 1997.

(14) T. Douseki, S.Shigematsu, J. Yamada, M. Harada, H. Inokawa, and T. Tsuchiya, “A 0.5-V MTCMOS/SIMOX Logic Gate,” IEEE J. Solid-State Circuits, Vol. 32, No. 10, pp. 1604-1609, Oct. 1997.

(15) T. Douseki, T. Shimamura, K. Fujii, and J. Yamada, “Energy-Reduction Effect of Ultralow-Voltage MTCMOS/SIMOX Circuits Using a Graph with Equispeed and Equienergy Lines,” Trans. IEICE, Vol. E83-C, No. 2, pp. 212-219, Feb. 2000.

(16) S. Nakata, T. Douseki, Y. Kado, and J. Yamada, “A Low Power Multiplier Using Adiabatic Charging Binary Decision Diagram Circuit,” Jpn. J. Appl. Phys. Vol. 39, pp. 2305-2311, Part 1, No. 4B, April 2000.

(17) T. Douseki, T. Yamada, J. Yamada, K. Ito, and K. Nishi, “Photovoltaic Display Module in a Mobile GPS,” Solar Energy Materials & Solar Cells, Vol 67, pp. 543-549, 2001.

(18) K. Fujii and T. Douseki, “A Sub-1V Bootstrap Pass-Transistor Logic,” Trans. IEICE, Vol. E86-C, No. 4, pp. 604-611, Apr. 2003.

(19) J. Kodate, M. Ugajin, T. Tsukahara, T. Douseki, N. Sato, T. Okaba, K. Ohmi, and T. Yonehara, “Gain Improvement of a 2.4-GHz/5GHz CMOS Low Noise Amplifier by Using High-ResistivitySilicon-on-Insulator,” Trans. IEICE, Vol. E86-C, No. 6, pp. 1041-1049, June 2003.

(20) T. Douseki, M. Yonemaru, E. Ikuta, A. Matsuzawa, A. Kameyama, S. Baba, T. Mogami, and H. Kyuragi, “Ultralow-voltage MTCMOS/SOI Circuits for Batteryless Mobile System,” Trans. IEICE, Vol. E87-C, No. 4, pp. 437-447, April 2004.

(21) Y. Yoshida, F. Utsunomiya, and T. Douseki, “Sub-1-V Power-supply System with Variable-stage SC-type DC-DC Converter Scheme for Ambient Energy Sources,” Trans. IEICE, Vol. E88-C, No. 4, pp. 484-489, April 2005.

(22) T. Douseki, T. Shimamura, and N. Shibata, “A Sub-0.5V Differential ED-CMOS/SOI Circuit with Over-1-GHz Operation,” Trans. IEICE, Vol. E88-C, No. 4, pp. 582-588, April 2005.

(23) J. Kodate, T. Douseki, T. Tsukahara, T. Okabe, and N. Sato, “Practical High- Resistivity Silicon-on-Insulator Solution for Spiral Inductors in CMOS RFICs, “ Jpn. J. Apply. Phys., Vol. 44 (2005), No. 8, pp. 5987-5993, 2005.


[2] 国際会議

(1) T. Douseki and Y. Ohmori, “BiCMOS Circuit Technology for a High-Speed SRAM,” 1987 Symp. VLSI Circuits, pp. 77-78, May. 1987.

(2) T. Douseki, Y. Ohmori, H. Yoshino, and J. Yamada, “Fast-Access BiCMOS SRAM with a VSS Generator,” 1990 Symp. VLSI Circuits, pp. 45-46, June. 1990.

(3) M. Tanimoto, T. Douseki, and T. Takigami, “An Analysis of p+-n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy,” The 1991 International Conference on Solid State Device and Materials, pp. 50-52, Aug. 1991.

(4) S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, and J. Yamada, “1-V High-Speed Digital Circuit Technology with 0.5-mm Multi-threshold CMOS,” Sixth Annual IEEE International ASIC Conference and Exhibit, pp. 186-189, Sep. 1993.

(5) T. Douseki, S. Mutoh, T. Ueki, and J. Yamada, “Soft-Error Immunity of 1-Volt CMOS Memory Cells with MTCMOS Technology,” The 1995 International Conference on Microelectonic Test Structure, pp. 107-111, Mar. 1995.

(6) T. Douseki, S.Shigematsu, Y. Tanabe, M. Harada, H. Inokawa, and T. Tsuchiya, “A 0.5-V SIMOX-MTCMOS Circuit with 200 ps Logic Gate,” 1996 IEEE International Solid-State Circuits Conference, pp. 84-85, Feb. 1996

(7) T. Douseki, Y. Tanabe, M. Harada and T. Tsuchiya, “A 0.5-V MTCMOS/SIMOX Data-Storage Circuit for Power-Down Applications,” The 8th International Symposium on Silicon-On-Insulator Technology and Devices, pp. 378-383, Aug. 1997.

(8) M. Urano, T. Douseki, T. Hatano, H. Fukuda, M. Harada, and T. Tsuchiya, “An Ultra- Low-Voltage MTCMOS/SIMOX Gate Array,” Tenth Annual IEEE International ASIC Conference and Exhibit, pp. 7-11, Sep. 1997.

(9) K. Fujii, T. Douseki, and M. Harada, “A Sub-1V Triple-Threshold CMOS/SIMOX Circuit for Active Power Reduction,” 1998 IEEE International Solid-State Circuits Conference, pp. 190-191, Feb. 1998.

(10) T. Douseki and J. Yamada, “Sub-1V MTCMOS/SIMOX Circuit Technology,” The1998 International Conference on Solid State Device and Materials, pp. 308-309, Aug. 1998.

(11) T. Douseki and M. Harada, “A 0.5-V Data-Storage Circuit for Triple-Threshold MTCMOS/SIMOX LSIs,” 1998 IEEE International SOI Conference, pp. 117-118, Oct. 1998.

(12) T. Douseki and J. Yamada, “MTCMOS/SIMOX Circuit Technology for Sub-1V LSIs,” The 9th International Symposium on Silicon-On-Insulator Technology and Devices, pp. 311-322, May. 1999.

(13) T. Douseki, T. Yamada, J. Yamada, K. Ito, and K. Nishi, “Photovoltaic Display Module in a Mobile GPS,” 11-th International Photovoltaic Science and Engineering Conference, pp. 245-246, 1999.

(14) K. Fujii and T. Douseki, “A 0.5-V, 3-mW, 54x54-b Multiplier with a Triple-Vth CMOS/SIMOX Circuit Scheme,” 2000 IEEE International SOI Conference, pp. 24-25, Oct. 2000.

(15) T. Douseki, N. Shibata, and J. Yamada, “A 0.5-1V MTCMOS/SIMOX SRAM Macro With Multi-Vth Memory Cells,” 2000 IEEE International SOI Conference, pp. 24-25, Oct. 2000.

(16) T. Douseki, “Ultralow-Voltage MTCMOS/SIMOX Circuit Technology,” Proc. of 3rd International Symposium on Advance and Technology of Silicon Materials, pp.667-675, Nov. 2000.

(17) K. Fujii, T. Douseki and Y. Kado, “A Sub-1V Dual-Threshold Domino Circuit Using Product-of-Sum Logic,” Proc. 2001 International Symposium on Low Power Electronics and Design, pp.259-262, Aug. 2001.

(18) T. Douseki and J. Yamada, “Low Voltage SOI Circuit Technology,” 2001 International Conference on Solid State Device and Materials, pp.258-259, Sep. 2001. (Invited Paper)

(19) T. Douseki, F. Morisawa, S. Nakata, and Y. Ohtomo, “A 0.5-V, Over 1-GHz, 1-mW MUX/DEMUX Core with Multi-Threshold Zero-Vth CMOS/SIMOX Technology,” 2001 International Conference on Solid State Device and Materials, pp. 264-265, Sep. 2001.

(20) T. Douseki, “Ultralow-voltage Multi-Vth CMOS/SOI Circuit Technology,” Extended Abstracts of International Symposium on Advanced CMOS Devices, pp. 29-32, Oct. 2001. (Invited Paper)

(21) T. Douseki, N. Shibata, and J. Yamada, “A 0.5-1V MTCMOS/SIMOX ROM Macro with Low-Vth Memory Cells,” 2001 IEEE International SOI Conference, pp. 143-144, Oct. 2001.

(22) J. Kodate, M. Ugajin, T. Tsukahara, T. Douseki, N. Sato, T. Okabe, K. Ohmi, and T. Yonehara, “A 2.4-GHz/5-GHz CMOS low noise amplifier with high-resistivity ELTRAN@ SOI-Epi wafers,” 2002 IEEE MTT-S Int. Microwave Symp. Dig., Vol. 3, pp. 1419-1422, May 2002.

(23) T. Douseki, J. Yamada, and H. Kyuragi, “Ultralow-power CMOS/SOI LSI Design for Future Mobile Systsms,” 2002 IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 6-9, June 2002. (Invited Paper, Plenary Talk)

(24) N. Hama, A. Yajima, Y. Yoshida, F. Utsunomiya, J. Kodate, T. Tsukahara, and T. Douseki, “SOI Circuit Technology for Batteryless Mobile System with Green Energy Sources,” 2002 IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 280-283, June 2002.

(25) T. Douseki, T. Shimamura, and N. Shibata, “A 0.3 V 3.6 GHz 0.3mW Frequency Divider with Differential ED-CMOS/SOI Circuit Technology,” 2003 IEEE International Solid-State Circuits Conference, pp. 114-115, Feb. 2003.

(26) T. Douseki, Y. Yoshida, F. Utsunomiya, and N. Hama, “A Batteryless Wireless System Uses Ambient Heat with a Reversible-Power-Source Compatible CMOS/SOI DC-DC Converter,” 2003 IEEE International Solid-State Circuits Conference, pp. 388-389, Feb. 2003.

(27) T. Douseki and H. Kyuragi, “Ultralow-power FD-SOI design for future mobile systems,” The 11th International Symposium on Silicon-On-Insulator Technology and Devices, pp. 209-214, May. 2003. (Invited Paper)

(28) Y. kado, Y. Matsuya, S. Mutoh, J. Terada, H. Morisawa, Y. Sato, T. Douseki, and H. Kyuragi, “Ultralow-power CMOS/SOI Circuit Technology for Ubiquitous Communications,” 2003 International Conference on Solid State Device and Materials, pp. 746-747, Sep. 2003. (Invited Paper)

(29) H. Matsuhashi, T. Okamura, T. Douseki, N. Miura, T. Chiba, and S. Baba, “On the Performance Advantage of undoped ultra thin-film FD-SOI MOSFETs,” 2003 International Conference on Solid State Device and Materials, pp. 748-749, Sep. 2003.

(30) Y. Matsuya and T. Douseki, “A 0.5-V Noise-Shaping A/D Converter Using Low- Threshold FD-SOI Transistors,” 2003 International Conference on Solid State Device and Materials, pp. 750-751, Sep. 2003.

(31) T. Douseki, T. Tsukahara, Y. Yoshida, F. Utsunomiya, and N. Hama, “A Batteryless Wireless System with MTCMOS/SOI Circuit Technology,” IEEE Custom Integrated Circuits Conference 2003, pp. 163-167, Sep. 2003. (Invited Paper)

(32) T. Douseki and H. Kyuragi, “Ultralow-voltage MTCMOS/SOI Circuits for Batteryless Wireless System,” 2003 IEEE International SOI Conference, pp. 5-8, Sep. 2003. (Invited Paper)

(33) T. Douseki, “A Batteryless Optical-Wireless System with White-LED Illumination 2004 IEEE 15th International Symposium on Personal, Indoor and Mobile Radio Communications, p. 2529-2533, Sep. 2004.

(34) T. Douseki, “Ultralow-voltage MTCMOS/SOI Technology for Batteryless Mobile System,” The 7th 2003 International Conference on Solid-State and Integrated- Circuit Technology,” pp. 1242-1247, Oct. 2004.