List of Papers (Takeshi Fujino)
- T.Fujino, Y.Kajiya, M.Yoshikawa:
“Character-Build Standard-Cell
Layout Technique for High-Throughput Character-Projection EB
lithography”, Proc. of SPIE, 5853, pp.160-167, (2005)
- T.Fujino, A.Yamazaki, Y.Taito,
M.Kinoshita, F.Morishita, T.Amano, M.Haraguchi, M.Hatakenaka, A.Amo,
A.Hachisuka, K.Arimoto, and H.Ozaki, "A Low Power Embedded DRAM Macro
for Battery-Operated LSIs", the IEICE Transactions on Fundamentals,
Vol.E86-A, p.2991-3000, (2003)
- Y.Taito, T.Tanizaki, M.Kinoshita, F.Igaue, T.Fujino, and K.Arimoto,
"An embedded DRAM with a 143-MHz SRAM interface using a
sense-synchronized read/write", IEEE J. Solid-State Circuits, vol.38,
No.11, pp.1967-1973 (2003)
- A. Yamazaki, T. Fujino, K. Inoue, I. Hayashi, H. Noda, N. Watanabe,
F. Morishita, K. Dosaka, Y. Morooka, S. Soeda, K. Arimoto, S. Wake, and
H. Ozaki: "0.18 um 32 Mb Embedded DRAM Macro for 3-D Graphics
Controller,the IEICE Transactions on Electronics, Vol.E85-C ,
pp.1697-1708. (2002)
- M.Tsukude, S.Kuge, T.Fujino, and
K.Arimoto: "A 1.2- to 3.3-V Wide Voltage-Range/Low-Power DRAM with a
Charge-Transfer Presensing Scheme", IEEE J. Solid-State Circuits 32
(1997) 1721.
- T.Fujino, H.Maeda,
Y.Kimura,
H.Horibe, Y.Imanaga, H.Shinkawata, S.Nakao, T.Kato, Y.Matsui,
M.Hirayama, and A.Yasuoka: "Electron Beam Direct Writing Techniques for
the Development of Sub-Quarter-Micron Devices", Jpn. J. Appl. Phys. 35
(1996) 6320.
- H.Joachim, Y.Yamaguchi,
T.Fujino,
T.Kato, Y.Inoue, and T.Hirao: "Comparison of Standard and Low-Dose
Separation-by-Implanted-Oxygen Substrates for 0.15 µm SOI MOSFET
Applications ", Jpn. J. Appl. Phys. 35 (1996) 983.
- S.Aya, K.Moriizumi,
T.Fujino,
K.Kamiyama, H.Minami, K.Kise, H.Yabe, K.Marumoto, and Y.Matsui:
"Proximity Effect Correction for 1:1 X-ray Mask Fabrication", Jpn. J.
Appl. Phys. 33 (1994) 6976.
- T.Fujino, H.Maeda,
K.Moriizumi,
T.Kato, and N.Tsubouchi: "Application of Proximity Effect Correction
Using Pattern-Area-Density to Patterning on a Heavy Metal Substrate and
the Cell-Projection Exposure", Jpn. J. Appl. Phys. 33 (1994) 6946.
- T.Fujino, H.Maeda,
T.Kumada,
K.Moriizumi, S.Kubota, H.Koezuka, H.Morimoto, Y.Watakabe, and
N.Tsubouchi: "Chemical amplification EB positive process free from
surface insoluble layer", J. Vac. Sci. Technol. B11(6), Nov./Dec.
(1993) 2773.
- H.Yabe, K.Marumoto,
S.Aya,
N.Yoshioka, T.Fujino, and Y.Watakabe: "Sputtered W-Ti Film for X-ray
Mask Absorber", Jpn. J. Appl. Phys. 31 (1992) 4210.
- # T.Fujino, K.Sasaki,
K.Marumoto,
H.Yabe, N.Yoshioka, and Y.Watakabe: "X-ray Mask Fabrication Process
Using Cr Mask and ITO Stopper in the Dry Etching of W Absorber", Jpn.
J. Appl. Phys. 31 (1992) 4086.
- T.Fujino, A.Ishii,
K.Kawai,
M.Matsuba, S.Nakao, and Y.Watakabe, "Novel Electron Beam Direct Writing
Technique for the Hole Pattern of Quarter Micron Devices", Jpn. J.
Appl. Phys. 31 (1992) 4262.
- T.Fujino, M.Hashimoto,
N.Yoshioka,
K.Moriizumi, T.Satou, H.Morimoto, and Y.Watakabe: "Fabrication of
0.25-μm Patterns on a Membrane Substrate-based X-ray Absorber", Jpn. J.
Appl. Phys. 30 (1991) 3058.
- N.Yoshioka, T.Fujino, H.Morimoto,
Y.Watakabe, and H.Abe: "Novel process using x-ray lithography for
T-shaped gate patterns", J. Vac. Sci. Technol. B6(6), Nov./Dec. (1990)
1535.
- T.Fujino, S.Takeuchi,
H.Morimoto,
Y.Watakabe, H.Abe, M.Koshiba, M.Murata, and S.Kawamura: "The surface
silylating process using chemical amplification resist for electron
beam lithography", J. Vac. Sci. Technol. B8(6), Nov./Dec. (1990) 1808.
- K.Moriizumi, S.Takeuchi,
T.Fujino,
S.Aoyama, M.Yoneda, H.Morimoto, and Y.Watakabe: "Electron Beam Direct
Writing Technologies for 0.3-μm ULSI Devices", Jpn. J. Appl. Phys. 29
(1990) 2584.
- K.Hosono, H.Minami,
H.Kusunose,
T.Fujino, K.Nagahama, H.Morimoto, and Y.Watakabe: “Sub-0.2-um
lithography by using a variable-shaped electron beam assisted by a
focused ion beam process”, J. Vac. Sci. Technol. B7(6), Nov./Dec.
(1989) 2044.
- K.Hosono, T.Fujino,
S.Matsuda, K.Nagahama, Y.Sasaki, H.Morimoto, and Y.Watakabe: "Hybrid
lithography of a focused ion beam and an electron beam for the
fabrication of a GaAs field effect transistor with a mushroom gate", J.
Vac. Sci. Technol. B6(6), Nov./Dec. (1988) 1828.
- T.Fujino, Y.Kajiya, M.Yoshikawa:
“Character-Built Standard-Cell Layout Technique for High-Throughput
Character-Projection EB lithography”, Photomask Japan 2004, Apr. (2005)
p.191
- Y. Taito, T. Tanizaki , M. Kinoshita , F. Igaue , T. Fujino,
and K. Arimoto, “A High Density Memory for SoC with a 143MHz SRAM
Interface Using Sense-Synchronized- Read/Write” Digest of Technical
Papers IEEE International Solid State Circuits Conference, Feb (2003)
- A.Yamazaki, T.Fujino, K.Inoue, I.Hayahi, H.Noda, N.Watanabe,
F.Morishita, J Ootani, M.Kobayashi, K.Dosaka, Y.Morooka, H.Shimano,
S.Soeda, A.Hachisuka, Y.Okumura, K.Arimoto, S.Wake, and H.Ozaki: "A
56.8GB/s 0.18um Embedded DRAM Macro with Dual Port Sense Amplifier for
3D Graphics Controller", Digest of Technical Papers IEEE International
Solid State Circuits Conference, Feb (2000) p.394.
- T.Fujino, and K.Arimoto: "Multi Gbit-scale Partially Frozen (PF) NAND
DRAM with SDRAM Compatible Interface", Symp. VLSI Circuits Dig. Tech.
Papers, June (1998) p.96.
- T.Tanizaki, T.Fujino, M.Tsukude, T.Tsuruda,
F.Morishita, T.Amano,
H.Kato, M.Kobayashi, and K.Arimoto: "Practical Low Power Design
Architecture for 256MbDRAM", Proc. of the 23rd Solid-State Circuits
Conference, Sep. (1997) p.188.
M.Tsukude, S.Kuge, T.Fujino and K.Arimoto: "A
1.2V to 3.3V
Wide-Voltage-Range DRAM with 0.8V Array Operation", Digest of Technical
Papers IEEE International Solid State Circuits Conference, Feb (1997)
p.66.
- Y.Nishioka, K.Shiozawa, T.Oishi, K.Kanamoto,
Y.Tokuda, H.Sumitani,
S.Aya, H.Yabe, K.Itoga, T.Hifumi, K.Marumoto, T.Kuroiwa, K.Nishikawa,
T.Oomori, T.Fujino, S.Yamamoto, S.Uzawa, M.Kimata, M.Nunoshita, and
H.Abe: "Giga-bit Scale DRAM Cell with New Simple Ru/(Ba,Sr)TiO3/Ru
Stacked Capacitors Using X-ray Lithography", Tech. Digest of
International Electron Device Meeting, Dec (1995) p.903.
- S.Shimizu, S.Kusunoki, T.Yamaguchi, T.Kuroi,
T.Fujino, H.Maeda,
Y.Hirose, M.Inuishi, and N.Tsubouchi: "0.15μm CMOS Process for High
performance and High Reliability.", Technical Digest of International
Electron Devices Meeting. (1994) p.67.
- S.Aya, K.Moriizumi, T.Fujino, H.Minami, K.Kise,
K.Kamiyama, H.Yabe,
K.Marumoto, and Y.Matsui: "Proximity effect correction for x-ray mask
fabrication.", Digest of Papers 1994 7th MicroProcess Conference (1994)
p.184.
- T.Fujino, H.Maeda, K.Moriizumi, and T.Kato:
"Application of proximity
effect correction to cell-projection method and
heavy-metal-substrate.", Digest of Papers 1994 7th MicroProcess
Conference (1994) p.190.
- K.Kamiyama, K.Moriizumi, T.Fujino, S.Takeuchi,
and H.Morimoto:
"Variable-Shaped Electron-Beam Exposure-Data Making System: Figure
Fracturing Algorithm for improvement of CD accuracy on 5X reticles.",
Proceedings of Photomask Japan (1994) p.96.
- T.Fujino, H.Maeda, T.Kumada, K.Moriizumi,
S.Kubota, H.Koezuka,
H.Morimoto, Y.Watakabe, and N.Tsubouchi: "Chemical amplification EB
positive process free from surface insoluble layer", EIPB Conference
(1993)
- H.Yabe, K.Marumoto, S.Aya, N.Yoshioka, T.Fujino,
and Y.Watakabe:
"Sputtered W-Ti Film for X-ray Mask Absorber", Digest of Papers 1992
5th MicroProcess Conference (1992)
- T.Fujino, A.Ishii, K.Kawai, M.Matsuba, S.Nakao,
and Y.Watakabe, "Novel
EB direct writing technique for the hole pattern of quarter micron
devices", Digest of Papers 1992 5th MicroProcess Conference (1992)
p.130.
- T.Fujino, M.Hashimoto, N.Yoshioka, K.Moriizumi,
T.Satou, H.Morimoto,
and Y.Watakabe: "Fabrication of 0.25-μm pattern of X-ray absorber on
membrane substrate", Digest of Papers 1991 4th MicroProcess
Conference
(1991) p.22.
- N.Yoshioka, T.Fujino, H.Morimoto, Y.Watakabe,
and H.Abe: "Novel process
using x-ray lithography for T-shaped gate patterns", EIPB
Conference(1990).
- T.Fujino, S.Takeuchi, H.Morimoto, Y.Watakabe,
H.Abe, M.Koshiba,
M.Murata, and S.Kawamura: "The surface silylating process using
chemical amplification resist for electron beam lithography", EIPB
Conference(1990).
- K.Moriizumi, S.Takeuchi, T.Fujino, S.Aoyama,
M.Yoneda, H.Morimoto, and
Y.Watakabe: "Electron Beam Direct Writing for 0.3-μm ULSI ", Digest of
Papers 1990 3rd MicroProcess Conference (1990) p.52.
- K.Hosono, H.Minami, H.Kusunose, T.Fujino,
K.Nagahama, H.Morimoto, and
Y.Watakabe: “Sub-0.2-um lithography by using a variable-shaped electron
beam assisted by a focused ion beam process”, EIPB Conference(1989).
- K.Hosono, T.Fujino, S.Matsuda, K.Nagahama,
Y.Sasaki, H.Morimoto, and Y.Watakabe: "Hybrid lithography of a focused
ion beam and an electron beam for the fabrication of a GaAs field
effect transistor with a mushroom gate", EIPB Conference(1988).
